Pixel Design Playground

The comprehensive pixel design tool. Configure every parameter of a BSI CMOS pixel — from silicon thickness to BARL sublayers — and see the combined effect on QE, reflectance, energy budget, and stack geometry.

Pixel Design Playground

Configure all pixel parameters and explore multi-panel results: QE spectra, layer stack visualization, and energy budget analysis powered by TMM.

PresetBSI 1um (default)BSI 0.8um (thin Si)High QE (thick Si)Custom

Pixel Parameters

Pixel pitch: 1.0 um

Silicon thickness: 3.0 um

BARL Parameters ▼

SiO2 #1: 10 nm

HfO2: 25 nm

SiO2 #3: 15 nm

Si3N4: 30 nm

Color Filter

CF thickness: 0.60 um

Channel:

Top Layers ▼

Planarization: 0.30 um

Microlens: 0.60 um

Simulation Settings

Angle of incidence: 0deg

Polarization:

Peak QE R

80.3%

Peak QE G

90.4%

Peak QE B

68.1%

Avg QE (vis)

22.7%

Avg Reflectance

7.2%

Stack Height

4.58 um

Design Guidelines

Maximizing QE

1. Thick silicon (3-4 μm) for red/NIR absorption
2. Optimized BARL to minimize interface reflection
3. Thin color filter to reduce parasitic absorption outside the passband
4. Low-loss planarization layer

Minimizing Crosstalk

1. Keep color filter absorption high (thick CF with sharp spectral edges)
2. Reduce silicon-transmitted light (relevant for thin Si at long wavelengths)

TIP

Start with a preset and adjust one parameter at a time to understand its effect. Compare the "BSI 1μm" and "High QE" presets to see the impact of silicon thickness and BARL optimization.